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TSM4N60
600V N-Channel Power MOSFET
TO-220 ITO-220 TO-251 (IPAK) TO-252 (DPAK)
Pin Definition: 1. Gate 2. Drain 3. Source
PRODUCT SUMMARY VDS (V)
600
RDS(on)()
2.5 @ VGS =10V
ID (A)
2
General Description
The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. There devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts base on half bridge topology.
Features
Robust high voltage termination Avalanche energy specified Diode is characterized for use in bridge circuits Source to Drain diode recovery time comparable to a discrete fast recovery diode.
Block Diagram
Ordering Information
Part No.
TSM4N60CZ C0 TSM4N60CI C0 TSM4N60CH C5 TSM4N60CP RO
Package
TO-220 ITO-220 TO-251 TO-252
Packing
50pcs / Tube 50pcs / Tube 80pcs / Tube 2.5Kpcs / 13" Reel
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulse Drain to Source Avalanche Energy o (VDD = 50V, IAS=4A, L=27.5mH, RG=25), Starting TJ = 25 C Repetitive Avalanche Energy (Pulse width limited by junction temperature) Peak Diode Recovery dv/dt (ISD 4A, di/dt 200A/us, VDD BVDSS) Starting TJ=25C TO-220 / TO-251 / TO-252 Maximum Power Dissipation o @Ta = 25 C ITO-220 Operating Junction Temperature Operating Junction and Storage Temperature Range
Symbol
VDS VGS ID IDM EAS EAR dv/dt PD TJ TJ, TSTG
Limit
600 30 4 16 240 10 4.5 70 25 +150 -55 to +150
Unit
V V A A mJ mJ V/ns W
o o
C C
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Version: A07
TSM4N60
600V N-Channel Power MOSFET
Thermal Performance
Parameter
Thermal Resistance TO-220 / TO-251 / TO-252 Junction to Case ITO-220 Thermal Resistance TO-220 / ITO-220 Junction to Ambient TO-251 / TO-252 Notes: Surface mounted on FR4 board t 10sec
Symbol
RJC RJA
Limit
1.78 5 62.5 100
Unit
o
C/W C/W
o
Electrical Specifications (Ta=25oC, unless otherwise noted)
Parameter Conditions Symbol
BVDSS BVDSS / TJ IDSS IGSS VGS(TH) RDS(ON) Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf IS ISM VSD trr Qrr
Min
600 ---2.0 -----------------
Typ
-0.6 ---2 15 2.8 6.2 545 60 8 10 35 45 40 ---300 2.2
Max
--10 100 4.0 2.5 20 --710 80 11 30 80 100 90 4 16 1.4 ---
Unit
V V/ C uA nA V
o
Off Characteristics Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA Breakdown Voltage Temperature ID = 250uA o Coefficient Referenced to 25 C Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V Gate Body Leakage VGS = 30V, VDS = 0V On Characteristics Gate Threshold Voltage VDS = VGS, ID = 250uA Drain-Source On-State Resistance VGS = 10V, ID = 2A Dynamic Characteristics Total Gate Charge VDS = 480V, ID = 4A, Gate-Source Charge VGS = 10V Gate-Drain Charge Input Capacitance VDS = 25V, VGS = 0V, Output Capacitance f = 1.0MHz Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time VGS = 10V, ID = 4A, VDD = 300V, RG = 25 Turn-Off Delay Time Turn-Off Fall Time Source-Drain Diode Ratings and Characteristics Continuous Source Current Integral Reverse p-n Junction Diode in the MOSFET Pulse Source Current Diode Forward Voltage IS = 4A, VGS = 0V Reverse Recovery Time IS = 4A, VGS = 0V dlF/dt=100A/us Reverse Recovery Charge Notes: a. Pulse test: pulse width <=300uS, duty cycle <=2% b. Essentially Independent of Operating Temperature.
nC
pF
nS
A V nS uC
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Version: A07
TSM4N60
600V N-Channel Power MOSFET
Electrical Characteristics Curve (Ta = 25 oC, unless otherwise noted)
Output Characteristics Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
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Version: A07
TSM4N60
600V N-Channel Power MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Breakdown Voltage vs. Temperature Threshold Voltage vs. Temperature
Maximum Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Version: A07
TSM4N60
600V N-Channel Power MOSFET
TO-220 Mechanical Drawing
DIM A B C D E F G H I J K L M N O P
TO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 10.000 10.500 0.394 0.413
3.740 3.910 0.147 0.154
2.440 0.381 2.345 4.690 12.700 8.382 14.224 3.556 0.508 27.700 2.032 0.255 5.842
2.940 6.350 1.106 2.715 5.430 14.732 9.017 16.510 4.826 1.397 29.620 2.921 0.610 6.858
0.096 0.015 0.092 0.092 0.500 0.330 0.560 0.140 0.020 1.060 0.080 0.010 0.230
0.116 0.250 0.040 0.058 0.107 0.581 0.355 0.650 0.190 0.055 1.230 0.115 0.024 0.270
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Version: A07
TSM4N60
600V N-Channel Power MOSFET
ITO-220 Mechanical Drawing
DIM A B C D E F G H I J K L M N O
ITO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 10.04 10.07 0.395 0.396 6.20 (typ.) 0.244 (typ.) 2.20 (typ.) 0.087 (typ.) 1.40 (typ.) 0.055 (typ.) 15.0 15.20 0.591 0.598 0.52 0.54 0.020 0.021 2.35 2.73 0.093 0.107 13.50 13.55 0.531 0.533 1.11 1.49 0.044 0.058 2.60 2.80 0.102 0.110 4.49 4.50 0.176 0.177 1.15 (typ.) 0.045 (typ.) 3.03 3.05 0.119 0.120 2.60 2.80 0.102 0.110 6.55 6.65 0.258 0.262
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Version: A07
TSM4N60
600V N-Channel Power MOSFET
SOT-251 Mechanical Drawing
DIM A A1 b C D D1 E e F L L1
TO-251 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 2.20 2.4 0.087 0.095 1.10 1.30 0.043 0.051 0.40 0.80 0.016 0.032 0.40 0.60 0.016 0.024 6.70 7.30 0.264 0.287 5.40 5.65 0.213 0.222 6.40 6.65 0.252 0.262 2.10 2.50 0.083 0.098 0.40 0.60 0.016 0.024 7.00 8.00 0.276 0.315 1.60 1.86 0.063 0.073
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Version: A07
TSM4N60
600V N-Channel Power MOSFET
SOT-252 Mechanical Drawing
DIM A A1 B C D E F G G1 G2 H I J K L M
TO-252 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 2.3BSC 0.09BSC 4.6BSC 0.18BSC 6.80 7.20 0.268 0.283 5.65 5.90 0.222 0.232 6.40 6.65 0.252 0.262 2.20 2.40 0.087 0.094 0.00 0.20 0.000 0.008 5.20 5.40 0.205 0.213 0.75 0.85 0.030 0.033 0.55 0.65 0.022 0.026 0.35 0.65 0.014 0.026 0.90 1.50 0.035 0.059 2.20 2.80 0.087 0.110 0.50 1.10 0.020 0.043 0.90 1.50 0.035 0.059 1.30 1.70 0.051 0.67
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Version: A07
TSM4N60
600V N-Channel Power MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.
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Version: A07

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